Power Integration Engineer

Description:

Power Integration Engineer

About The Department

North Carolina State University is leading the charge as the recipient of a $39.4 million award from the Department of Defense to establish the regional Microelectronics Commons regional innovation hub, Commercial Leap Ahead for Wide Bandgap Semiconductors ( CLAWS ). This initiative, part of the larger $238 million investment through the Creating Helpful Incentives to Produce Semiconductors ( CHIPS ) and Science Act, aims to revolutionize the field of wide bandgap semiconductors.

Hub leadership, Distinguished Professors John Muth and Fred Kish, are dedicated to the “lab to fab” journey—translating laboratory advancements into fabrication capabilities for wide bandgap semiconductors. The hub brings together a dynamic partnership with N.C. A&T State University and industry leaders, including Wolfspeed, Coherent Corp., General Electric, Bluglass, Adroit Materials, and Kyma Technologies, Inc. This collaborative effort will propel the development of semiconductors crucial for national defense, electric vehicles, power grid technologies, 5G/6G, quantum technologies, and artificial intelligence applications.

Wolfpack Perks And Benefits

As a Pack member, you belong here, and can enjoy exclusive perks designed to enhance your personal and professional well-being.

What we offer:
 

• Medical , Dental , and Vision
• Flexible Spending Account
• Retirement Programs
• Disability Plans
• Life Insurance
• Accident Plan
• Paid Time Off and Other Leave Programs
• 12 Holidays Each Year
• Tuition and Academic Assistance
• And so much more!
   

Attain Work-life balance with our Childcare benefits, Wellness & Recreation Membership , and Wellness Programs that aim to build a thriving wolfpack community.

Disclaimer: Perks and Benefit eligibility is based on Part-Time or Full-Time Employment status. Eligibility and Employer Sponsored Plans can be found within each of the links offered.

Essential Job Duties

We are seeking a highly skilled Wide-Bandgap Power Device Engineer to join our team and contribute to the development of next-generation power semiconductor devices. The ideal candidate will have expertise in semiconductor process integration, power device design (diodes, FETs, etc.), electrical characterization, and device simulation to drive innovation in high-efficiency, high-performance wide-bandgap power solutions.

Key Responsibilities

• Power Device Design & Development (30%)
  • Design and optimize GaN power devices (HEMTs, Diodes, lateral/vertical FETs) for high-voltage and high-frequency applications.
  • Utilize TCAD simulation (e.g., Synopsys, Silvaco, etc.) for process and device modeling, electrical characteristics prediction, and performance enhancement.
  • Develop and refine device layouts for wafer fabrication, ensuring manufacturability and reliability.
• Process Integration & Fabrication (30%)
  • Work to define and optimize GaN-on GaN, GaN-on-Si, GaN-on-SiC, and other heteroepitaxial structures for power applications.
  • Lead the wafer process flow development, including epi structures, etching, metallization, and passivation steps.
  • Troubleshoot process integration challenges related to defectivity, yield, and reliability.
• Electrical Characterization & Reliability Testing (20%)
  • Define and execute device characterization plans (IV, CV, breakdown, leakage, switching performance).
  • Analyze reliability metrics such as TDDB , HTRB , HTOL , and step-stress testing to assess long-term device stability.
  • Interface with packaging and application engineers to optimize thermal management and electrical performance in real-world applications.
• Cross-functional Collaboration (20%)
  • Work with process engineers and R&D partners to drive technology improvements.
  • Collaborate with circuit designers, applications engineers, and product development teams to translate device-level improvements into system-level advantages.
  • Stay up to date with emerging GaN technology trends, competitive landscape, and industry benchmarks.

Other Responsibilities

• The successful candidate will:
  • Comply with stated workplace policies.
  • Communicate results, plans, and other updates to a variety of audiences.
  • Adhere to and mentor others in known best practices.
  • Support CLAWS activities such as tours, meetings, and conferences.

Qualifications

Minimum Education and Experience
 

• Ph.D. or M.S. in Electrical Engineering, Materials Science, or a related field with a focus on power semiconductor devices.
• 3+ years of experience in GaN power device design and process integration (industry or research).