Description:
We are seeking a world-class R&D Engineer to lead innovation in advanced MOSFET technologies. This role will drive next-generation device architecture, performance optimization, and technology strategy across our power and/or logic semiconductor portfolio.
This position is based in the Greater Phoenix Area, Arizona.
What You Will Be Doing
MOSFET Device & Technology Development
- Develop and optimize advanced power MOSFET device structures and technologies to achieve electrical, reliability, cost, and manufacturability requirements
- Design new products to meet cost, performance, reliability, and manufacturing requirements.
- Apply semiconductor device physics to analyze and optimize key performance parameters and efficiency in target applications
- Originate and evaluate new device concepts, materials, structures, and process technologies to deliver best in class performance
- Perform technology benchmarking and competitive analysis of semiconductor devices and processes
- Contribute to technology roadmaps and long-term semiconductor R&D strategies.
Core Competencies
The Ideal Candidate Will Demonstrate
- Strong semiconductor device physics fundamentals
- Hands-on R&D and experimental mindset
- Data-driven and structured problem solving
- Design of Experiments and statistical analysis
- Strong technical communication
- Cross-functional collaboration
- Project ownership and accountability
- Innovation and continuous improvement
- Ability to work effectively in a fast-paced R&D environment
Cross-Functional Leadership
- Work closely with Process Engineering, Product Engineering, Manufacturing, Quality, Reliability, Applications Engineering, and Operations teams.
- Lead technical projects and teams. Communicate development status, risks, results, and recommendations to engineering and management teams.
- Collaborate with global Vishay engineering organizations to leverage technology, best practices, and manufacturing capabilities.
- Provide technical mentorship and contribute to a culture of innovation, continuous improvement, and disciplined problem solving.
Required Qualifications
- Master's degree in Electrical Engineering, Electrical & Computer Engineering, Materials Science, Physics, Chemical Engineering, or a related technical field.
- Ph.D. preferred in Electrical Engineering, Semiconductor Engineering, Materials Science, or Physics.
- 3+ years of semiconductor industry experience in MOSFET, power semiconductor, discrete semiconductor, or related device/process development.
- Strong understanding of MOSFET device physics and semiconductor processing.
- Experience with bench test, device characterization, and electrical test data analysis.
- Experience with semiconductor fabrication processes and wafer manufacturing.
- Strong analytical, problem-solving, and experimental design skills.
- Ability to work effectively across multidisciplinary engineering and manufacturing organizations.